| PART |
Description |
Maker |
| GLT6200L16LI-70FG GLT6200L16LI-85TC GLT6200L16LI-5 |
70ns; Ultra low power 128K x 16 CMOS SRAM
85ns; Ultra low power 128K x 16 CMOS SRAM
55ns; Ultra low power 128K x 16 CMOS SRAM
|
G-LINK Technology
|
| IC62LV1024AL IC62LV1024ALL-45B IC62LV1024ALL-45BI |
70ns; 2.7-3.3V; 128K x 8 low-power and low Vcc CMOS static RAM
ASYNCHRONOUS STATIC RAM, Low Power A.SRAM
128K x 8 Ultra Low Power and Low VCC SRAM
From old datasheet system
55ns; 2.7-3.3V; 128K x 8 low-power and low Vcc CMOS static RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| IC62VV12816LL IC62VV12816L IC62VV12816L-70B IC62VV |
ASYNCHRONOUS STATIC RAM, Low Power A.SRAM
128Kx16 bit 1.8V and Ultra Low Power CMOS Static RAM
70ns; 1.8V; 128K x 16 ultra low power CMOS static RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| IS62U6416LL-20B IS62U6416LL-20K IS62U6416LL-20BI I |
64K x 16 LOW VOLTAGE, ULTRA-LOW POWER CMOS STATIC RAM 128K X 8 STANDARD SRAM, 200 ns, PDSO44
|
Integrated Silicon Solution, Inc.
|
| N02L63W2AB25I N02L63W2AT5I N02L63W2AT5IT N02L63W2A |
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K ? 16 bit
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K × 16 bit
|
ON Semiconductor
|
| N02L163WC2AT2 N01L163WC2AB2-55I N01L163WC2AB-55I N |
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K × 16 bit
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K 】 16 bit
|
http://
NANOAMP[NanoAmp Solutions, Inc.]
|
| V62C3801024L-100T V62C3801024LL-85V V62C3801024L V |
High Temp Tested PC357N5TJ00F
Ultra Low Power 128K x 8 CMOS SRAM 128K的超低功耗8 CMOS SRAM
|
MOSEL[Mosel Vitelic Corp]
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic, Corp.
|
| V62C2801024L V62C2801024LL-85V V62C2801024L_L-100B |
Ultra Low Power 128K x 8 CMOS SRAM 128K的超低功耗8 CMOS SRAM
|
MOSEL[Mosel Vitelic Corp]
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic, Corp.
|
| KM68V1000BLE_LE-L KM68U1000BLE_LE-L KM68U1000BLG-1 |
CONNECTOR ACCESSORY 连接器附
128K X 8bit Low Power and Low Voltage CMOS Statinc RAM 128K的8位低功耗和低电压的CMOS Statinc内存
(KM68V1000B / KM68U1000B) 128K X 8bit Low Power and Low Voltage CMOS Statinc RAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| IS62LV12816LL IS62LV12816L IS62LV12816L-55B IS62LV |
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
ASYNCHRONOUS STATIC RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| AS7C33128NTF32_36B AS7C33128NTF36B-80TQIN AS7C3312 |
3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 36 ZBT SRAM, 8 ns, PQFP100
3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 32 ZBT SRAM, 7.5 ns, PQFP100
Cap-Free, NMOS, 150mA Low Dropout Regulator with Reverse Current Protection 128K X 36 ZBT SRAM, 10 ns, PQFP100
3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 36 ZBT SRAM, 10 ns, PQFP100
3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 36 ZBT SRAM, 7.5 ns, PQFP100
3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 32 ZBT SRAM, 10 ns, PQFP100
LM194/LM394 Supermatch Pair; Package: TO-99; No of Pins: 6; Qty per Container: 500; Container: Box 128K X 36 ZBT SRAM, 7.5 ns, PQFP100
LM195/LM395 Ultra Reliable Power Transistors; Package: TO-220; No of Pins: 3; Qty per Container: 45; Container: Rail
LM392 Low Power Operational Amplifier/Voltage Comparator; Package: SOIC NARROW; No of Pins: 8; Qty per Container: 95; Container: Rail
3.3V 128K × 32/36 Flowthrough Synchronous SRAM with NTDTM
LM3916 Dot/Bar Display Driver; Package: MDIP; No of Pins: 18; Qty per Container: 20; Container: Rail
LM392 Low Power Operational Amplifier/Voltage Comparator; Package: MDIP; No of Pins: 8; Qty per Container: 40; Container: Rail
NTD? Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| BS62UV1024JC BS62UV1024JI BS62UV1024PC BS62UV1024S |
Sensor Magnet; For Use With:LY-30 Series Sensor; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes
Ultra Low Power/Voltage CMOS SRAM 128K X 8 bit 超低功率/电压CMOS SRAM28K的8
|
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, INC.
|
